Electrical properties of CeOx/La2O3 stack as a gate dielectric for advanced MOSFET technology

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 153-160

  Kouda, Miyuki ^a   Tachi, Kiichi ^a   Kakshima, Kuniyuki ^a   Ahmet, Parhat ^a   Tsutsui, Kazuo ^a   Sugii, Nobuyuki ^a   Chandorkar, A N ^b   Hattori, Takeo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACE STATES; LOGIC GATES; MOSFET DEVICES;

ELECTROCHEMICALS; GATE STACKS; INTERFACE STATE DENSITY; MOSFETS; ORDERS OF MAGNITUDE; SINGLE LAYER;

GATE DIELECTRICS;

EID: 63149087378     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981597     Document Type: Conference Paper

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