Annealing-temperature dependence of compositional depth profile and chemical structures of LaOx/ScOx/si and ScOx/LaOx/si interfacial transition layer

ECS Transactions

Volumn 16, Issue 5, 2009, Pages 171-176

  Nohira, Hiroshi ^a   Takenaga, Yoshinori ^a   Kakushima, Kuniyuki ^b   Ahmet, Parhat ^b   Tsutsui, Kazuo ^b   Iwai, Hiroshi ^b  

^a TOKYO CITY UNIVERSITY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; GATE DIELECTRICS; HIGH-K DIELECTRIC; LANTHANUM COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; STRUCTURE (COMPOSITION); SUBSTRATES; TEMPERATURE DISTRIBUTION;

ANGLE-RESOLVED; ANNEALING TEMPERATURES; COMPOSITIONAL DEPTH PROFILE; ELECTRONIC BAND STRUCTURE; INTERFACIAL TRANSITION LAYER; POST DEPOSITION ANNEALING; SI SUBSTRATES; X RAY PHOTOEMISSION SPECTROSCOPY;

SILICON;

EID: 63149093139     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2981599     Document Type: Conference Paper

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