Thermally induced interfacial interactions between various metal substrates and a-SiC thin films deposited by a polymer-source chemical vapor deposition

Materials Chemistry and Physics

Volumn 104, Issue 2-3, 2007, Pages 350-355

  Awad, Y ^a,b   El Khakani, M A ^c   Aktik, C ^a   Mouine, J ^a   Camire N ^b   Lessard, M ^b   Scarlete, M ^d  

^a UNIVERSITÉ DE SHERBROOKE   (Canada)

^b SiXtron Advanced Materials Inc   (Canada)

^c INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE   (Canada)

^d BISHOP'S UNIVERSITY   (Canada)

Author keywords

Carbides; Interfaces; Polymers; Semiconductors

Indexed keywords

CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; MOLECULAR PRECURSORS; POLY(DIMETHYLSILANE) (PDMS); SUBSTRATE TEMPERATURE;

CHEMICAL VAPOR DEPOSITION; INTERFACES (MATERIALS); OPTOELECTRONIC DEVICES; SILICON CARBIDE; SUBSTRATES;

THIN FILMS;

EID: 34447503453     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2007.03.030     Document Type: Article

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