Dislocation engineering in multicrystalline silicon

Solid State Phenomena

Volumn 156-158, Issue , 2009, Pages 11-18

  Bertoni, Mariana ^a   Colin, Clémence ^a   Buonassisi, Tonio ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

Annihilation; Dislocations; High temperature anneal; Mc si; Ribbon silicon

Indexed keywords

ANNEALING; DEFECTS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE; DISLOCATIONS (CRYSTALS);

AMBIENT CONDITIONS; ANNEALING TEMPERATURES; ANNIHILATION; CRYSTALLOGRAPHIC GLIDE; DISLOCATION ANNIHILATION; DISLOCATION DENSITY REDUCTION; DISLOCATION ENGINEERING; DISLOCATION MOVEMENT; FACE-CENTERED CUBIC METALS; HIGH TEMPERATURE; HIGH TEMPERATURE TREATMENTS; HIGH-TEMPERATURE ANNEALING; MULTI-CRYSTALLINE SILICON; MULTICRYSTALLINE SILICON (MC-SI); SILICON NITRIDE COATING; TEMPERATURE DEPENDENT; TIME-DEPENDENT MODELS; HIGH-TEMPERATURE ANNEAL; RIBBON SILICONS;

SINGLE CRYSTALS; DEFECTS;

EID: 75849142249     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.156-158.11     Document Type: Conference Paper

References (23)

1. B.L. Sopori and W. Chen, Journal of Crystal Growth Vol. 210 (2000) p. 375
2. G. Stokkan, S. Riepe, O. Lohne, and W. Warta, Journal of Applied Physics Vol. 101 (2007), p. 053515
3. C. Donolato, J. App. Phys. Vol. 84 (1998) p. 2656
4. V. Kveder, M. Kittler, and W. Schröter, Physical Review B Vol. 63 (2001) p. 115208
5. M. Seibt, R. Khalil, V. Kveder and W. Schröter, Appl. Phys. A Vol. 96 (2009) p. 235
6. M. Rinio, S. Peters, M. Werner, A. Lawerenz, and H.-J. Möller, Solid State Phenomena Vol. 82 (2002) p. 701
7. K. Nakayashiki, V. Meemongkolkiat, and A. Rohatgi, IEEE Transactions on Electron Devices Vol. 52 (2005) p. 2243
8. J. Isenberg, J. Dicker, and W. Warta, Journal of Applied Physics Vol. 94 (2003) p. 4122
9. O. Schultz, S.W. Glunz, S. Riepe and G.P. Willeke, Prog. Photovolt: Res. Appl. Vol. 14 (2006) p. 711
10. M. Rinio, M. Kaes, G. Hahn, and D. Borchert, Proc. 21st European Photovoltaics Conference and Exhibition, Dresden, Germany (2006), p. 684.
11. A. Zuschlag, G. Micard, J. Junge, M. Käs, G. Hahn, G. Coletti, G. Jia, and W. Seifert, Proceedings of the 33rd IEEE Photovoltaics Specialists Conference, San Diego, U.S.A. (2008)
12. K. Hartman, M. Bertoni, J. Serdy, T. Buonassisi, Appl. Phys. Let. Vol. 93 (2008) p. 122108
13. J. Samuels and S. G. Roberts, Proceedings of the Royal Academy of London. Series A, Mathematical and Physical Sciences Vol. 421 (1989) p. 1
14. A.S. Argon, Strengthening mechanisms in crystal plasticity (Oxford University Press, New York, 2008).
15. S. Takeuchi and A.S. Argon, Journal of Materials Science Vol. 11 (1976) p. 1542
16. W.S. Rasband. U. S. National Institutes of Health. http://rsb.info.nih. gov/ij/
17. D. Kuhlmann, Proceedings of the Physical Society A Vol. 64 (1951) p. 140
18. E. Nes, Acta Metallurgica et Materialia Vol. 43(1995) p. 2189
19. H. Alexander, Crystal Research Technology Vol. 16 (1981) p. 231
20. Y.M. Huang, J.C.H. Spence, O.F. Sankey Vol. 74 (1995) pp. 3392
21. J.C.H. Spence, Acta Materialia, Vol. 47 (1999) p. 4153
22. R. Sinton and A. Cuevas, Applied Physics Letters 69 (1996) p. 2510
23. M. Berg, G. Stokkan and O. Lohne, Proceedings of the 3rd International Workshop on Crystalline Silicon Solar Cells - CSSC3, SINTEF/NTNU, Trondheim Norway (in press)