InP and Si metal-oxide semiconductor structures fabricated using oxygen plasma assisted wafer bonding

Journal of Electronic Materials

Volumn 32, Issue 3, 2003, Pages 111-116

  Forsberg, Markus ^a,c   Pasquariello, Donato ^b   Camacho, Martin ^c   Bergman, David ^a  

^a UPPSALA UNIVERSITY   (Sweden)

^b University of California   (United States)

^c Micronic Laser Systems AB   (Sweden)

Author keywords

C V measurement; InP; MOS; Oxygen plasma; Si; Wafer bonding

Indexed keywords

ANNEALING; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICA; SILICON WAFERS; STOICHIOMETRY; THERMAL EXPANSION;

CAPACITANCE-VOLTAGE CURVE; OXYGEN PLASMA ASSISTED WAFER BONDING; OXYGEN PLASMA TREATMENT; THERMAL OXIDE; WAFER BONDING;

MOS DEVICES;

EID: 0037351177     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0180-5     Document Type: Article

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