2.0 μm electroluminescence from Si/ Si0.2 Ge0.8 type II heterojunctions

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Liao, M H ^a   Cheng, T H ^a   Liu, C W ^a   Yeh, Lingyen ^b   Lee, T L ^b   Liang, M S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; MOS DEVICES; SILICON COMPOUNDS;

ELECTRON HOLE PLASMA RECOMBINATION MODELS; INFRARED EMISSION;

HETEROJUNCTIONS;

EID: 38149131363     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817811     Document Type: Article

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