SCOPUS 정보 검색 플랫폼

Volumn 95, Issue 15, 2009, Pages

High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2 O3 gate dielectric

(5) Lichtenwalner, Daniel J a Misra, Veena a Dhar, Sarit b Ryu, Sei Hyung b Agarwal, Anant b

a North Carolina State University (United States)

b Arkansas Power Electronics International Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; ATOMIC LAYER DEPOSITED; BI-LAYER; FIELD-EFFECT MOBILITIES; GATE-LAST; HIGH MOBILITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; NORMALLY OFF MOSFET; PEAK MOBILITY; POWER DEVICES;

DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; MOS DEVICES; MOSFET DEVICES; NITRIC OXIDE; SILICON CARBIDE;

FIELD EFFECT TRANSISTORS;

EID: 70350050873 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3251076 Document Type: Article

Times cited : (43)

References (14)

1
- 29844444585
- 0883-7694.
- J. J. Sumakeris, J. R. Jenny, and A. R. Powell, MRS Bull. 0883-7694 30, 280 (2005).
- (2005) MRS Bull. , vol.30 , pp. 280
- Sumakeris, J.J.¹ Jenny, J.R.² Powell, A.R.³

2
- 55449112727
- 0370-1972,. 10.1002/pssb.200743478
- P. Friedrichs, Phys. Status Solidi B 0370-1972 245, 1232 (2008). 10.1002/pssb.200743478
- (2008) Phys. Status Solidi B , vol.245 , pp. 1232
- Friedrichs, P.¹

3
- 32844463750
- 0883-7694.
- S. Dhar, S. Wang, J. R. Williams, S. T. Pantelides, and L. C. Feldman, MRS Bull. 0883-7694 30, 288 (2005).
- (2005) MRS Bull. , vol.30 , pp. 288
- Dhar, S.¹ Wang, S.² Williams, J.R.³ Pantelides, S.T.⁴ Feldman, L.C.⁵

4
- 2442685851
- 0953-8984,. 10.1088/0953-8984/16/17/019
- V. V. Afanas'ev, F. Ciobanu, S. Dimitrijev, G. Pensl, and A. Stesmans, J. Phys.: Condens. Matter 0953-8984 16, S1839 (2004). 10.1088/0953-8984/16/17/019
- (2004) J. Phys.: Condens. Matter , vol.16 , pp. 1839
- Afanas'Ev, V.V.¹ Ciobanu, F.² Dimitrijev, S.³ Pensl, G.⁴ Stesmans, A.⁵

5
- 84980487607
- 0255-5476,. 10.4028/www.scientific.net/MSF.338-342.1315
- C. -M. Zetterling, M. Östling, H. Yano, T. Kimoto, H. Matsunami, K. Linthicum, and R. F. Davis, Mater. Sci. Forum 0255-5476 338, 1315 (2000). 10.4028/www.scientific.net/MSF.338-342.1315
- (2000) Mater. Sci. Forum , vol.338 , pp. 1315
- Zetterling, C.-M.¹ Östling, M.² Yano, H.³ Kimoto, T.⁴ Matsunami, H.⁵ Linthicum, K.⁶ Davis, R.F.⁷

6
- 36248970008
- 3 gate dielectric films deposited by atomic layer deposition on 4H-SiC
- DOI 10.1063/1.2805742
- C. M. Tanner, Y. -C. Perng, C. Frewin, S. E. Saddow, and J. P. Chang, Appl. Phys. Lett. 0003-6951 91, 203510 (2007). 10.1063/1.2805742 (Pubitemid 350128962)
- (2007) Applied Physics Letters , vol.91 , Issue.20 , pp. 203510
- Tanner, C.M.¹ Perng, Y.-C.² Frewin, C.³ Saddow, S.E.⁴ Chang, J.P.⁵

7
- 55449128008
- 0370-1972,. 10.1002/pssb.200844011
- G. Pensl, S. Beljakowa, T. Frank, K. Gao, F. Speck, T. Seyller, L. Ley, F. Ciobanu, V. Afanas'ev, A. Stesmans, T. Kimoto, and A. Schöner, Phys. Status Solidi B 0370-1972 245, 1378 (2008). 10.1002/pssb.200844011
- (2008) Phys. Status Solidi B , vol.245 , pp. 1378
- Pensl, G.¹ Beljakowa, S.² Frank, T.³ Gao, K.⁴ Speck, F.⁵ Seyller, T.⁶ Ley, L.⁷ Ciobanu, F.⁸ Afanas'Ev, V.⁹ Stesmans, A.¹⁰ Kimoto, T.¹¹ Schöner, A.¹²

8
- 49249139436
- 0018-9383,. 10.1109/TED.2008.926647
- T. Hatayama, S. Hino, N. Miura, T. Oomori, and E. Tokumitsu, IEEE Trans. Electron Devices 0018-9383 55, 2041 (2008). 10.1109/TED.2008.926647
- (2008) IEEE Trans. Electron Devices , vol.55 , pp. 2041
- Hatayama, T.¹ Hino, S.² Miura, N.³ Oomori, T.⁴ Tokumitsu, E.⁵

9
- 0035310635
- Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
- DOI 10.1109/55.915604, PII S0741310601028646
- G. Y. Chung, C. C. Tin, J. R. Williams, K. McDonald, R. K. Chanana, R. A. Weller, S. T. Pantelides, L. C. Feldman, O. W. Holland, M. K. Das, and J. W. Palmour, IEEE Electron Device Lett. 0741-3106 22, 176 (2001). 10.1109/55.915604 (Pubitemid 32406808)
- (2001) IEEE Electron Device Letters , vol.22 , Issue.4 , pp. 176-178
- Chung, G.Y.¹ Tin, C.C.² Williams, J.R.³ McDonald, K.⁴ Chanana, R.K.⁵ Weller, R.A.⁶ Pantelides, S.T.⁷ Feldman, L.C.⁸ Holland, O.W.⁹ Das, M.K.¹⁰ Palmour, J.W.¹¹

10
- 0043028391
- 0018-9383,. 10.1109/TED.2003.814974
- C. -Y. Lu, J. A. Cooper, Jr., T. Tsuji, G. Chung, J. R. Williams, K. McDonald, and L. C. Feldman, IEEE Trans. Electron Devices 0018-9383 50, 1582 (2003). 10.1109/TED.2003.814974
- (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1582
- Lu, C.-Y.¹ Cooper Jr., J.A.² Tsuji, T.³ Chung, G.⁴ Williams, J.R.⁵ McDonald, K.⁶ Feldman, L.C.⁷

11
- 33845419668
- Work function engineering using lanthanum oxide interfacial layers
- DOI 10.1063/1.2396918
- H. N. Alshareef, M. Quevedo-Lopez, H. C. Wen, R. Harris, P. Kirsch, P. Majhi, B. H. Lee, R. Jammy, D. J. Lichtenwalner, J. S. Jur, and A. I. Kingon, Appl. Phys. Lett. 0003-6951 89, 232103 (2006). 10.1063/1.2396918 (Pubitemid 44907244)
- (2006) Applied Physics Letters , vol.89 , Issue.23 , pp. 232103
- Alshareef, H.N.¹ Quevedo-Lopez, M.² Wen, H.C.³ Harris, R.⁴ Kirsch, P.⁵ Majhi, P.⁶ Lee, B.H.⁷ Jammy, R.⁸ Lichtenwalner, D.J.⁹ Jur, J.S.¹⁰ Kingon, A.I.¹¹

12
- 55649113068
- 1938-5862,. 10.1149/1.2911491
- B. -M. Lee, D. J. Lichtenwalner, M. Agustin, R. Arghavani, X. Tang, S. Gandikota, V. Ku, and V. Misra, ECS Trans. 1938-5862 13, 123 (2008). 10.1149/1.2911491
- (2008) ECS Trans. , vol.13 , pp. 123
- Lee, B.-M.¹ Lichtenwalner, D.J.² Agustin, M.³ Arghavani, R.⁴ Tang, X.⁵ Gandikota, S.⁶ Ku, V.⁷ Misra, V.⁸

13
- 56249098317
- 0003-6951,. 10.1063/1.3007978
- R. Suri, B. Lee, D. J. Lichtenwalner, N. Biswas, and V. Misra, Appl. Phys. Lett. 0003-6951 93, 193504 (2008). 10.1063/1.3007978
- (2008) Appl. Phys. Lett. , vol.93 , pp. 193504
- Suri, R.¹ Lee, B.² Lichtenwalner, D.J.³ Biswas, N.⁴ Misra, V.⁵

14
- 0001954222
- 0094-243X.
- J. R. Hauser, and K. Ahmed, AIP Conf. Proc. 0094-243X 449, 235 (1998).
- (1998) AIP Conf. Proc. , vol.449 , pp. 235
- Hauser, J.R.¹ Ahmed, K.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.