Effect of germanium on redistribution of boron and phosphorus during thermal oxidation of silicon

Semiconductor Science and Technology

Volumn 18, Issue 2, 2003, Pages 139-143

  Aleksandrov, O V ^a   Afonin, N N ^b  

^a SAINT PETERSBURG ELECTROTECHNICAL UNIVERSITY LETI   (Russian Federation)

^b VORONEZH STATE PEDAGOGICAL UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION; CRYSTAL IMPURITIES; DIFFUSION IN SOLIDS; GERMANIUM; OXIDATION; PROBABILITY;

SELF-INTERSTITIALS;

SILICON;

EID: 0037320666     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/2/313     Document Type: Article

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