Ab initio chemical kinetic study for reactions of H atoms with SiH 4 and Si2H6: Comparison of theory and experiment

Journal of Physical Chemistry A

Volumn 114, Issue 1, 2010, Pages 633-639

  Wu, S Y ^a   Raghunath, P ^a   Wu, J S ^a   Lin, M C ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO; CATALYTIC CHEMICAL VAPOR DEPOSITION; CHEMICAL KINETICS; DIFFERENT MECHANISMS; DISILANES; EXPERIMENTAL DATA; H-ABSTRACTION; HYDROGEN ATOMS; ISODESMIC REACTIONS; REACTION PATHWAYS; TRANSITION STATE THEORIES;

ABSTRACTING; ATOMS; PLASMA DEPOSITION; RATE CONSTANTS; REACTION KINETICS; SILICON;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 75249107158     PISSN: 10895639     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp908222g     Document Type: Article

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