Preparation and characterization of BiFeO3/LaNiO3 heterostructure films grown on silicon substrate

Journal of Crystal Growth

Volumn 312, Issue 4, 2010, Pages 617-620

  Li, Y W ^a,b   Shen, Y D ^a,b   Yue, F Y ^a,b   Hu, Z G ^a,b   Ma, X M ^a,b   Chu, J H ^a,b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

A3. Polycrystalline deposition; B1. Perovskite; B2. Dielectric material.; B2. Ferroelectric materials

Indexed keywords

A3. POLYCRYSTALLINE DEPOSITION; APPLIED VOLTAGES; B1. PEROVSKITE; B2. DIELECTRIC MATERIAL.; BOTTOM ELECTRODES; CHEMICAL SOLUTION DEPOSITION; COMPACT MICROSTRUCTURE; ELECTRICAL MEASUREMENT; FREQUENCY DEPENDENCE; GRAIN SIZE; HETEROSTRUCTURES; LOSS TANGENT; MICRO-ELECTRONIC DEVICES; POLY CRYSTALLINE DEPOSITION; REMNANT POLARIZATIONS; SATURATED HYSTERESIS LOOPS; SEED LAYER; SI(1 0 0); SILICON SUBSTRATES;

ELECTRIC VARIABLES MEASUREMENT; FERROELECTRIC DEVICES; FERROELECTRICITY; FILM PREPARATION; HYSTERESIS; HYSTERESIS LOOPS; MICROELECTRONICS; OXIDE MINERALS; PEROVSKITE; POLARIZATION; PULSED LASER DEPOSITION; PULSED LASERS;

FERROELECTRIC MATERIALS;

EID: 74549122065     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.058     Document Type: Article

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