Growth and properties of BiFeO 3 thin films deposited on LaNiO 3 -buffered SrTiO 3 (0 0 1) and (1 1 1) substrates by PLD

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 3466-3469

  Zhu, J ^a   Luo, W B ^a   Li, Y R ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

BFO; Ferroelectric polarization; RHEED; XRD

Indexed keywords

BISMUTH COMPOUNDS; CONDUCTIVE FILMS; FERROELECTRIC FILMS; FERROELECTRICITY; IRON COMPOUNDS; LANTHANUM COMPOUNDS; NICKEL COMPOUNDS; POLARIZATION; PULSED LASER DEPOSITION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; STRONTIUM TITANATES; SUBSTRATES; TITANIUM COMPOUNDS; X RAY DIFFRACTION;

CONDUCTIVE LAYER; EPITAXIAL RELATIONSHIPS; EPITAXIALLY GROWN; FERROELECTRIC HYSTERESIS LOOP; FERROELECTRIC POLARIZATION; FERROELECTRIC PROPERTY; HIGH-ENERGY ELECTRON; POLARIZATION AXIS;

THIN FILMS;

EID: 56949103933     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.09.008     Document Type: Article

References (19)

1. Fiebig M. J. Phys. D 38 (2005) R123
2. Venevtsev Yu.N., Zhadanov G., and Solov'ev S. Sov. Phys. Crystallogr. 4 (1960) 538
3. Fischer P., Polomskya M., Sosnowska I., and Szymanksi M. J. Phys. C 13 (1980) 1931
4. Kubel F., and Schmid H. Acta. Crystallogr. B: Struct. Sci. 46 (1990) 698
5. Teague J.R., Gerson R., and James W.J. Solid State Commun. 7 (1970) 701
6. Lee Y.-H., Wu J.-M., Chen Y.-C., Lu Y.-H., and Lin H.-N. Electrochem. Solid-State Lett. 8 (2005) 10
7. Luo W.B., Zhu J., Li Y.R., Wang X.P., Zhao D., Xiong J., and Zhang Y. Appl. Phys. Lett. 91 (2007) 082501
8. Béa H., Bibes M., Barthélémy A., Bouzehouane K., Jacquet E., Khodan A., Contour J.-P., Fusil S., Wyczisk F., Forget A., Lebeugle D., Colson D., and Viret M. Appl. Phys. Lett. 87 (2005) 072508
9. Qi X., Dho J., Tomov R., Blamire M.G., and MacManus-Driscoll J.L. Appl. Phys. Lett. 86 (2005) 062903
10. Ueda K., Tabata H., and Kawai T. Appl. Phys. Lett. 75 (1999) 555
11. Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., and Ramesh R. Science 299 (2003) 1719
12. Lee Y.-H., Wu J.-M., Chueh Y.-L., and Chou L.-J. Appl. Phys. Lett. 87 (2005) 172901
13. Yang C.C., Chen M.S., Hong T.J., Wu C.M., Wu J.M., and Wu T.B. Appl. Phys. Lett. 66 (1995) 2643
14. Chen M.S., Wu T.B., and Wu J.M. Appl. Phys. Lett. 68 (1996) 1430
15. Zheng L., Zhu J., Zhang Y., Jiang S.W., Li Y.R., Wei X.H., and Li J.L. Appl. Surf. Sci. 252 (2006) 3609
16. Zhu J., Zheng L., Zhang Y., Wei X.H., Luo W.B., and Li Y.R. Mater. Chem. Phys. 100 (2006) 451
17. Zhu J., Zheng L., Luo W.B., Li Y.R., and Zhang Y. J. Phys. D: Appl. Phys. 39 (2006) 2438
18. Wang Y.P., Zhou L., Zhang M.F., Chen X.Y., Liu J.-M., and Liu Z.G. Appl. Phys. Lett. 84 (2004) 1731
19. Xiao X.H., Zhu J., Luo W.B., Li Y.R., Yu B.F., Fan L.X., Ren F., Liu C., and Jiang Z.C. J. Phys. D: Appl. Phys. 40 (2007) 5775