Low-temperature preparation of highly (100)-oriented Pb(Zr xTi1-x)O3 thin film by high oxygen-pressure processing

Applied Physics Letters

Volumn 86, Issue 25, 2005, Pages 1-3

  Zhang, X D ^a   Meng, X J ^b   Sun, J L ^a   Lin, T ^a   Chu, J H ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC FIELD EFFECTS; HYDROTHERMAL SYNTHESIS; LOW TEMPERATURE EFFECTS; MOS CAPACITORS; PRESSURE EFFECTS; THIN FILMS; X RAY DIFFRACTION;

CROSS-SECTION; HIGH INTENSITY; MEMORY COMPONENTS; OXYGEN PRESSURE;

LEAD COMPOUNDS;

EID: 24344470227     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1952567     Document Type: Article

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