Oxygen-vacancy-related dielectric relaxation in BiFeO3 films grown by pulsed laser deposition

Journal of Physics D: Applied Physics

Volumn 41, Issue 21, 2008, Pages

  Li, Y W ^a   Hu, Z G ^a   Yue, F Y ^a   Yang, P X ^a   Qian, Y N ^a   Cheng, W J ^a   Ma, X M ^a   Chu, J H ^a,b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT COMPOUNDS; DIELECTRIC PROPERTIES; DIELECTRIC RELAXATION; ELECTRIC CONDUCTIVITY; FREQUENCY RESPONSE; LEAKAGE (FLUID); NONMETALS; OXYGEN; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; VACANCIES;

BFO FILMS; BIASED VOLTAGES; CALCULATED VALUES; DC ELECTRIC CONDUCTIVITIES; DIELECTRIC RESPONSES; ELECTRICAL PERFORMANCES; FREQUENCY DEPENDENCES; INTERFACIAL POLARIZATIONS; LEAKAGE PERFORMANCES; OXYGEN STOICHIOMETRIES; PULSED LASERS; SILICON SUBSTRATES; UNIVERSAL DIELECTRIC RESPONSES;

OXYGEN VACANCIES;

EID: 58149293770     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/21/215403     Document Type: Article

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