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Volumn 527-529, Issue PART 1, 2006, Pages 21-26

Halide-CVD growth of bulk SiC crystals

Author keywords

Bulk growth; Crystalline quality; Deep traps; Halide CVD; Impurities; Semi insulating crystals; Stoichiometry

Indexed keywords

CHEMICAL VAPOR DEPOSITION; GROWTH TEMPERATURE; HALOGENATION; HOLE TRAPS; SILICON CARBIDE; STOICHIOMETRY;

EID: 37849014309     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.21     Document Type: Conference Paper
Times cited : (5)

References (19)
  • 16
    • 37849045039 scopus 로고    scopus 로고
    • S.W. Huh, H.J. Chung, S. Nigam, A.Y. Polyakov, Q. Li, M. Skowronski, E.R. Glaser, W.E. Carlos, B.V. Shanabrook and M.A. Fanton: submitted to J. Appl. Phys, 2005
    • S.W. Huh, H.J. Chung, S. Nigam, A.Y. Polyakov, Q. Li, M. Skowronski, E.R. Glaser, W.E. Carlos, B.V. Shanabrook and M.A. Fanton: submitted to J. Appl. Phys, 2005


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.