Physics of direct bonding: Applications to 3D heterogeneous or monolithic integration

Microelectronic Engineering

Volumn 87, Issue 3, 2010, Pages 477-484

  Gueguen, Pierric ^a,b   Ventosa, Caroline ^a,b   Cioccio, Léa Di ^a,b   Moriceau, Hubert ^a,b   Grossi, François ^a,b   Rivoire, Maurice ^a,b   Leduc, Patrick ^a,b   Clavelier, Laurent ^a,b  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

3D integration; Bonding alignment; Copper bonding; Direct bonding; Self assembly; Through silicon via

Indexed keywords

3D INTEGRATION; DIRECT BONDING; DIRECT WAFER BONDING; ENGINEERED-SUBSTRATE; MONOLITHIC INTEGRATION; SILICON-ON-INSULATORS; SOI WAFERS; THROUGH-SILICON-VIA; VERTICAL INTEGRATION; WAFER DIRECT BONDING;

ALIGNMENT; MONOLITHIC INTEGRATED CIRCUITS; SELF ASSEMBLY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; THREE DIMENSIONAL;

WAFER BONDING;

EID: 74449083287     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.07.030     Document Type: Article

References (36)

1. N. Sillon, A. Astier, H. Boutry, L. Di Cioccio, D. Henry, P. Leduc, Enabling technologies for 3D integration: from packaging miniaturization to advanced stacked ICs, in: Proceeding of IEDM 08, pp. 1-4.
2. L. Di Cioccio, P. Gueguen, F. Grossi, 3D Technologies at CEA-Leti Minatec, in: Proceedings of IMAPS 08.
3. P. Gueguen, L. Di Cioccio, M. Rivoire, et al., Copper direct bonding for 3D integration, in: Proceedings of the IEEE IITC Conference, 2008, p. 61.
4. P. Gueguen, L. Di Cioccio, J.Gonchond, 3D vertical interconnects by copper direct bonding, in: Proceeding of MRS, 2008.
5. Lasky J.B. Appl. Phys. Lett. 48 (1986) 78
6. Bruel M. Electron. Lett. 31 (1995) 1201
7. Tong Q.Y., and Gosele U. Semiconductor Wafer Bonding: Science and Technology (1999), Wiley, New York
8. Esser R.H., Hobart K.D., and Kub F.J. J. Electrochem. Soc. 150 3 (2003) G228-G231
9. F. Fournel et al., Semiconductor wafer bonding 10: Science, technology and applications, in: ECS Transactions, Hawaï, 2008.
10. Tong Q.Y., and Gosele U. Mater. Chem. Phys. 37 (1994) 101
11. F. Rieutord et al., Semiconductor wafer bonding 9: Science, technology and applications, in: ECS Transactions, vol. 3, 2006, p. 205.
12. Ventosa C., Rieutord F., Libralesso L., Morales C., Fournel F., and Moriceau H. J. Appl. Phys. 104 (2008)
13. C. Ventosa et al., Electrochem. Solid State Lett. (2009), accepted for publication.
14. Rieutord F., Eymery J., Fournel F., Buttard D., Oeser R., Plantevin O., Moriceau H., and Aspar B. Phys. Rev. B 63 (2001) 125408
15. C. Maleville, O. Rayssac, H. Moriceau, B. Biasse, L. Baroux, B. Aspar, M. Bruel, Semiconductor wafer bonding 4: Science, technology and applications, in: ECS PV1997-36, 1997.
16. Weldon M.K., Chabal Y.J., Hamann D.R., Christman S.B., and Chaban E.E. J. Vac. Sci. Technol. B 14 (1996) 4
17. B. Aspar, C. Lagahe-Blanchard, H. Moriceau, Semiconductor wafer bonding 8: Science, technology and applications, in: ECS Transactions, PV05, Quebec, 2005.
18. I. Radu, R. Singh, M. Reiche, U. Gosele, S. Christiansen, Semiconductor wafer bonding 8: Science, technology and applications, in: ECS Transactions, Quebec, 2005.
19. B.E. Roberds, S.N. Farrens, in: ECS-IV Wafer Bonding Conference, 1997, p. 598.
20. Sanz-Velasco A., et al. J. Electrochem. Soc. 150 2 (2003) G155
21. H. Moriceau, F. Rieutord, C. Morales, S. Sartori, A. Charvet, Semiconductor wafer bonding 8: Science, technology and applications, in: ECS Transactions, Quebec, 2005.
22. T. Suni, K. Henttinen, A. Lipsanen, J. Dekker, H. Luoto, M. Kulawski, Semiconductor wafer bonding 8: Science, technology and applications, in: ECS Transactions, Quebec, 2005.
23. L. di Cioccio, B. Biasse, M. Kostrzewa, M. Zussy, J. Dechamp, B. Charlet, M. Vinet, J. Fedeli, T. Poiroux, N. Kernevez, P. Regreny, C. Lagahe-Blanchard, B. Aspar, Semiconductor wafer bonding 8: Science, technology and applications, in: ECS Transactions, Quebec, 2005.
24. Roelkens G., Van Campenhout J., Brouckaert J., Van Thourhout D., Baets R., Rojo Romeo P., Regreny P., Kazmierczak A., Seassal C., Letartre X., Hollinger G., Fedeli J.M., Di Cioccio L., and Lagahe-Blanchard C. Mater. Today 10 7-8 (2007)
25. L. Di Cioccio, New heterostructures and 3D devices obtained by the bonding and thinning technique, in: Ninth International Symposium on Semiconductor Wafer Bonding; Science, Technology and Applications, Electrochemical Society Fall Meeting, October 29-November 3, 2006, Cancun, Mexico.
26. F. Grossi, L. Di Cioccio, et al., Self Assembly of Die to Wafer using Direct Bonding Methods and Capillary Forces, 3D Integration Workshop in MRS Boston, 2008.
27. Chen K.N., Fan A., Tan C.S., et al. J. Electron. Mater. 32 12 (2005) 1464
28. A. Shigetou, T. Itoch, T. Suga, Electrical performance and reliability of fine-pitch Cu bumpless interconnect, in: Proceedings on ECTC, 2005, pp.1114-1118.
29. P. Enquist, Direct bond technology for 3-D IC applications, in: Proceedings on the RTI Conference 64 (10) (2007) 4943-4950.
30. Z. Huang, R. Chatterjee, P. Justison, et al., Electromigration of Cu-Sn-Cu micropads in 3D interconnect, in: Proceedings on ECTC, 2008, p. 12.
31. R. Labie, W. Ruythooren, K. Baert, et al., Resistance to electromigration of purely intermetallic micro-bump interconnections for 3D-device stacking, in: Proceedings on IITC, 2008, p. 19.
32. Maszara W.P., Goetz G., Caviglia A., et al. J. Appl. Phys. 64 10 (1988) 4943-4950
33. Tadepalli R., Turner K.T., and Thompson C.V. J. Mech. Phys. Solids 56 3 (2007) 707-718
34. Turner K.T., and Spearing S.M. J. Appl. Phys. 103 (2008) 013514
35. Chen K.N., Fan A., and Tan C.S. El. Dev. Lett. 25 1 (2004)
36. D. Temple, Bonding for 3-D integration of heterogeneous technologies and materials, in: ECS Transactions, 2008, pp. 3-13.