Copper direct bonding for 3D integration

2008 IEEE International Interconnect Technology Conference, IITC

Volumn , Issue , 2008, Pages 61-63

  Gueguen, Pierric ^a   Di Cioccio, Léa ^a   Rivoire, Maurice ^b   Scevola, Daniel ^a   Zussy, Marc ^a   Charvet, Anne Marie ^a   Bally, Laurent ^a   Lafond, Dominique ^a   Clavelier, Laurent ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; COMPUTER NETWORKS;

3-D INTEGRATION; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; ROOM TEMPERATURES;

COPPER;

EID: 50949128270     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2008.4546926     Document Type: Conference Paper

References (8)

1. L. Di Cioccio, "3D integration Leti Review, in IMAPS (2008)
2. P.Leduc, "Enabling technologies for 3D chip stacking" in VLSI (2008)
3. K.N. Chen et al, J. Elec Mat, 32(12), p 1464 (2005)
4. A.Jourdain et al, Simultaneous Cu-Cu and Compliant Dielectric Bonding for 3D Stacking of ICs, in IITC (2007)
5. T.Suga et al., in Low Temperature Bonding for 3D Integration, p.3 (2007)
6. P. Enquist et al, Direct Bond Technology for 3-D IC Applications, in RTI conference (2007)
7. W.P.Maszara et al. Bonding of silicon wafers for silicon on insulator. J. Appl. Phys. 64 (10), 4943-4950. (1988)
8. R. Tadepalli et al, J Mech Phys Solids, in press (2007)