Forward-bias operation of Si detectors: A way to work in high-radiation environment: On behalf of the ROSE (RD-48) collaboration

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 439, Issue 2-3, 2000, Pages 293-302

  Beattie, L J ^a   Chilingarov, A ^a   Sloan, T ^a  

^a LANCASTER UNIVERSITY   (United Kingdom)

Author keywords

Forward bias operation; Irradiated silicon detectors

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; NEUTRON IRRADIATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; THERMAL EFFECTS;

CHARGE COLLECTION EFFICIENCY (CCE); DARK CURRENTS; FORWARD-BIASED DETECTORS; SEMICONDUCTOR DETECTORS;

PARTICLE DETECTORS;

EID: 0033889932     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(99)00840-2     Document Type: Article

References (23)

1. RD48 Status Report, CERN/LHCC 97-39, 20 June 1997.
2. A. Chilingarov, T. Sloan, Nucl. Instr. and Meth. A 399 (1997) 35.
3. A. Chilingarov et al., Nucl. Instr. and Meth. A 360 (1995) 432.
4. J.A.J. Matthews et al., Nucl. Instr. and Meth. A 381 (1996) 338.
5. L.J. Beattie et al., Nucl. Instr. and Meth. A 412 (1998) 238.
6. J.-C. Manifacier et al., J. Appl. Phys. 56 (1984) 357.
7. K. Zdansky et al., J. Appl. Phys. 79 (1996) 3611.
8. G. Lutz, Nucl. Instr. and Meth. A 377 (1996) 234.
9. B.K. Jones et al., Nucl. Instr. and Meth. A 395 (1997) 81.
10. J.D. Richardson, Ph.D. Thesis, University of Liverpool, 1995.
11. T. Angelescu, A. Vasilescu, Nucl. Instr. and Meth. A 374 (1996) 85.
12. H.-J. Ziock et al., Nucl. Instr. and Meth. A 342 (1994) 96.
13. L. Beattie et al., Dependence of depletion voltage and capacitance on temperature and frequency in heavily irradiated silicon diodes, ROSE Technical Note 97/4, March 1997.
14. P. Jarron et al., in: L. Cifarelli, T. Ypsilantis (Eds.), New Technologies for Supercolliders, Plenum, New York, 1991, pp. 105-123.
15. A. Chilingarov, T. Sloan, Proceedings of the third International Workshop on Gallium Arsenide and Related compounds, San Miniato, Italy, March 21-24 1995, World Scientific, Singapore, p. 52.
16. N. Croitoru et al., Nucl. Instr. and Meth. B 111 (1996) 297.
17. A. Chilingarov, T. Sloan, Nucl. Instr. and Meth. A 388 (1997) 395.
18. L. Beattie et al., Forward bias I- V characteristics for heavily irradiated silicon diodes, ROSE Technical Note TN/98-1, March 1998.
19. S. Ramo, IRE 27 (1939) 584.
20. L.J. Beattie et al., Nucl. Instr. and Meth. A 418 (1998) 314.
21. F. Lemeilleur et al., IEEE Trans. Nucl. Sci. NS-39 (1992) 551.
22. T.J. Brodbeck, A. Chilingarov, Nucl. Instr. and Meth. A 395 (1997) 29.
23. + n pixel detector structures, ATLAS Internal Note INDET-No-189, 10 November 1997.