Recovery of charge collection in heavily irradiated silicon diodes with continuous hole injection

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 518, Issue 1-2, 2004, Pages 343-345

  Cindro, V ^a   Mandic I ^a   Kramberger, G ^a   Mikuz M ^a,b   Zavrtanik, M ^b  

^a JO EF STEFAN INSTITUTE   (Slovenia)

^b UNIVERSITY OF LJUBLJANA   (Slovenia)

Author keywords

Charge collection efficiency; Radiation hardness; Silicon detectors

Indexed keywords

BANDWIDTH; CURRENT DENSITY; DETECTORS; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; IRRADIATION; LIGHTING; NUCLEAR REACTORS; RADIATION HARDENING;

CHARGE COLLECTION EFFICIENCY; RADIATION HARDNESS; SILICON DETECTORS;

SEMICONDUCTOR DIODES;

EID: 0942288163     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2003.11.017     Document Type: Conference Paper

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