Temperature dependence of electron and hole signals in irradiated p+-n-n+ diodes in the presence of continuous carrier injection

IEEE Transactions on Nuclear Science

Volumn 49, Issue 1 II, 2002, Pages 264-269

  Zavrtanik, Marko ^a   Cindro, Vladimir ^a   Kramberger, Gregor ^a   Mandič, Igor ^a   Mikuž, Marko ^a  

^a JO EF STEFAN INSTITUTE   (Slovenia)

Author keywords

Charge collection efficiency; Effective trapping time; Silicon detectors; Transient current technique

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC SPACE CHARGE; ELECTRIC VARIABLES MEASUREMENT; ELECTRON IRRADIATION; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; PARTICLE BEAM INJECTION; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; THERMAL EFFECTS;

CHARGE COLLECTION EFFICIENCY; CHARGE TRAPPING; CONTINUOUS CARRIER INJECTION; EFFECTIVE TRAPPING TIME; TRANSIENT CURRENT TECHNIQUE;

SEMICONDUCTOR DIODES;

EID: 0036464375     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.998651     Document Type: Article

References (8)

1. Effects of deep level defects in semiconductor detectors
2. Analytical simulation of electric field manipulation and reduction of full depletion voltage by nonequilibrium carrier injection
3. Improved radiation hardness for Si detectors
4. Intrinsic optical absorption in single cristal germanium and silicon at 77K and 300K
5. Radiation tolerance of silicon particle detectors for high-energy physics experiments
6. Determination of effective trapping times for electron and holes in irradiated silicon
7. Charge collection efficiency of irradiated silicon detector operated at cryogenic temperatures
8. Polarization of silicon detectors by minimum ionizing particles