Characteristics of SiOF films formed by remote plasma enhanced chemical vapor deposition with SF6 gas

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 6 B, 1996, Pages

  Yu, B G ^a   Kim, K H ^a   Suh, K S ^a   Baek, J T ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXPERIMENTS; FLOW OF FLUIDS; FLUORINE COMPOUNDS; INTERMETALLICS; PLASMA APPLICATIONS;

DIELECTRIC CONSTANT; GAP FILLING; LOW DIELECTRIC FILMS; REFLECTIVE INDEX; REMOTE PLASMA;

DIELECTRIC FILMS;

EID: 0030165128     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l745     Document Type: Article

References (7)