Complementary infrared and transmission electron microscopy studies of the effect of high temperature-high pressure treatments on oxygen-related defects in irradiated silicon

Journal of Applied Physics

Volumn 94, Issue 7, 2003, Pages 4363-4367

  Londos, C A ^a   Potsidi, M S ^a   Misiuk, A ^b   Ratajczak, J ^b   Emtsev, V V ^c   Antonaras, G ^a  

^a UNIVERSITY OF ATHENS   (Greece)

^b ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; IRRADIATION; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; VANADIUM COMPOUNDS;

HIGH PRESSURE TREATMENTS;

SILICON;

EID: 0142120871     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1602952     Document Type: Article

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