Pressure assisted evolution of defects in silicon

Crystal Research and Technology

Volumn 38, Issue 12, 2003, Pages 1058-1062

  Londos, C A ^a   Potsidi, M S ^a   Bak Misiuk, J ^b   Misiuk, A ^c   Emtsev, V V ^d  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF PHYSICS   (Poland)

^c ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

Hydrostatic pressure; Neutron irradiation; Oxygen related defects; Silicon

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; DIMERS; HYDROSTATIC PRESSURE; INFRARED SPECTROSCOPY; IRRADIATION; NEUTRONS; PARAMAGNETIC RESONANCE; VACCINES; VANADIUM COMPOUNDS;

INFRARED (IR) ABSORPTION; MIGRATION ENERGY;

SILICON;

EID: 0348233411     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200310136     Document Type: Article

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