Effect of carbon on oxygen precipitation in Czochralski silicon

Physica Status Solidi C: Conferences

Volumn 2, Issue 6, 2005, Pages 1963-1967

  Londos, C A ^a   Potsidi, M S ^a   Emtsev, V V ^b  

^a UNIVERSITY OF ATHENS   (Greece)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; INTERFACIAL ENERGY; OXYGEN; PRECIPITATION (CHEMICAL); SILICON;

OXYGEN IMPURITY; OXYGEN PRECIPITATION PROCESS;

CRYSTAL GROWTH FROM MELT;

EID: 27344447953     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200460537     Document Type: Conference Paper

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