Full quantum investigation of low field mobility in short-channel Silicon nanowire FETs

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Poli, Stefano ^a   Pala, Marco G ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b MINATEC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; COMPUTATIONAL STUDIES; COUPLED MODE; EFFECTIVE MOBILITIES; LOW FIELD MOBILITY; NON-EQUILIBRIUM GREEN'S FUNCTION FORMALISM; QUANTUM TREATMENT; SCALED DEVICES; SCALING TRENDS; SCATTERING CO-EFFICIENT; SCATTERING MECHANISMS; SILICON NANOWIRE FETS; SILICON NANOWIRES;

ELECTRON-PHONON INTERACTIONS; GREEN'S FUNCTION; MESFET DEVICES; NANOWIRES; QUANTUM THEORY; SEMICONDUCTOR DEVICES; SURFACE ROUGHNESS;

COHERENT SCATTERING;

EID: 74349083691     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290193     Document Type: Conference Paper

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