Backscattering coefficient and drift-diffusion mobility extraction in short channel MOS devices

Solid-State Electronics

Volumn 53, Issue 1, 2009, Pages 54-56

  Pappas, I ^a,b   Ghibaudo, G ^a   Dimitriadis, C A ^b   Fenouillet Beranger C ^c  

^a IMEP LAHC   (France)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

^c STMICROELECTRONICS   (France)

Author keywords

Ballistic; Mobility; MOSFET

Indexed keywords

BACKSCATTERING; BALLISTICS; EXPLOSIVES; MOS DEVICES; SEMICONDUCTOR DOPING;

BACKSCATTERING COEFFICIENTS; BALLISTIC; DIFFUSION MOBILITIES; GATE LENGTHS; LINEAR OPERATIONS; MOBILITY; MOBILITY MEASUREMENTS; MOSFET; SCATTERING MECHANISMS; SHORT CHANNELS;

SCATTERING;

EID: 57449113169     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.09.012     Document Type: Article

References (10)

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