Effects of surface functionalization on titanium dioxide atomic layer deposition on Ge surfaces

ECS Transactions

Volumn 25, Issue 4, 2009, Pages 131-139

  Ardalan, Pendar ^a   Musgrave, Charles B ^b   Bent, Stacey F ^a  

^a Stanford University   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; AUGER ELECTRON SPECTROSCOPY; CONTACT ANGLE; DENSITY FUNCTIONAL THEORY; DEPOSITION RATES; GERMANIUM; GERMANIUM COMPOUNDS; GERMANIUM METALLOGRAPHY; HIGH-K DIELECTRIC; INFRARED SPECTROSCOPY; OXIDE MINERALS; POTASSIUM COMPOUNDS; TITANIUM DIOXIDE; TITANIUM METALLOGRAPHY; X RAY PHOTOELECTRON SPECTROSCOPY;

AREA SELECTIVE; LOWER TEMPERATURES; SELECTIVE DEPOSITION; STRONG DEPENDENCES; SURFACE FUNCTIONALIZATION; TITANIUM DIOXIDES (TIO2); TITANIUM TETRACHLORIDES; WATER CONTACT ANGLE MEASUREMENT;

ATOMIC LAYER DEPOSITION;

EID: 74249087013     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3205050     Document Type: Conference Paper

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