Effect of quantum confinement on optical properties of Ge nanocrystals in GeO2 films

Semiconductors

Volumn 39, Issue 10, 2005, Pages 1168-1175

  Gorokhov, E B ^a   Volodin, V A ^a   Marin, D V ^a   Orekhov, D A ^a   Cherkov, A G ^a   Gutakovskii A K ^a   Shvets, V A ^a   Borisov, A G ^a   Efremov, M D ^a  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 26044476141     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.2085265     Document Type: Article

References (36)

1. T. T. Shimizu-Iwayama, K. Fujita, S. Nakao, et al., J. Appl. Phys. 75, 7779 (1994).
2. V. Yu. Timoshenko, M. G. Lisachenko, B. V. Kamenev, et al., Appl. Phys. Lett. 84, 2512 (2002).
3. S. Takeoka, M. Fujii, S. Hayashi, and K. Yamamoto, Phys. Rev. B 58, 7921 (1998).
4. I. E. Tyschenko, V. A. Volodin, L. Rebohle, et al., Fiz. Tekh. Poluprovodn. (S.-Peterburg) 33, 559 (1999)
5. [Semiconductors 33, 523 (1999)].
6. N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, Phys. Rev. Lett. 86, 1355 (2001).
7. D. Nesheva, C. Raptis, A. Perakis, et al., J. Appl. Phys. 92, 4678 (2002).
8. G. A. Kachurin, S. G. Yanovskaya, V. A. Volodin, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 685 (2002)
9. [Semiconductors 36, 647 (2002)].
10. V. A. Volodin, E. B. Gorokhov, M. D. Efremov, et al., Pis'ma Zh. Éksp. Teor. Fiz. 77, 485 (2003)
11. [JETP Lett. 77, 411 (2003)].
12. N. N. Ovsyuk, E. B. Gorokhov, V. V. Grishchenko, et al., Pis'ma Zh. Éksp. Teor. Fiz. 47, 248 (1988)
13. [JETP Lett. 47, 298 (1988)].
14. E. B. Gorokhov, V. V. Grishchenko, N. N. Ovsyuk, and L. I. Fedina, Poverkhnost, No. 10, 82 (1990).
15. E. B. Gorokhov and V. V. Grishchenko, in Ellipsometry: Theory, Methods, and Applications, Ed. by A. V. Rzhanov (Nauka, Novosibirsk, 1987), p. 147 [in Russian].
16. V. I. Gavrilenko, A. M. Grekhov, D. V. Korbutyak, and V. G. Litovchenko, Optical Properties of Semiconductors (Naukova Dumka, Kiev, 1987) [in Russian].
17. A. M. Mishchenko, Preprint, IFP SO RAN (Inst. of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, Novosibirsk, 1979).
18. M. D. Efremov, V. A. Volodin, V. A. Sachkov, et al., Pis'ma Zh. Éksp. Teor. Fiz. 70, 73 (1999)
19. [JETP Lett. 70, 75 (1999)].
20. V. Pailard and P. Puech, J. Appl. Phys. 86, 1921 (1999).
21. D. E. Aspnes, Thin Solid Films 89, 249 (1982).
22. G. Nelin and G. Nilsson, Phys. Rev. B 5, 3151 (1972).
23. Shang-Fen Ren and Wei Cheng, Phys. Rev. B 66, 205328 (2002).
24. L. D. Landau and E. M. Lifshitz, Course of Theoretical Physics, Vol. 3: Quantum Mechanics: Non-Relativistic Theory, 4th ed. (Nauka, Moscow, 1989; Pergamon, Oxford, 1977).
25. V. A. Burdov, Fiz. Tekh. Poluprovodn. (St. Petersburg) 36, 1233 (2002)
26. [Semiconductors 36, 1154 (2002)].
27. T. V. Torchinska, A. Diaz Cano, M. Morales Rodrigues, and L. Yu. Khomenkova, Physica B (Amsterdam) 340-342, 1113 (2003).
28. D. Kovalev, H. Heckler, M. Ben-Chorin, et al., Phys. Rev. Lett. 81, 2803 (1998).
29. M. Lannoo, C. Delerue, and G. Allan, J. Lumin. 70, 170 (1996).
30. Y. C. King, T. J. King, and C. Hu, in Technical Digest of International Electron Devices Meeting (1998), p. 115.
31. E. B. Gorokhov, A. M. Mishchenko, I. G. Kovalenko, et al., Poverkhnost, No. 5, 67 (1983).
32. E. B. Gorokhov, I. G. Kosulina, S. V. Pokrovskaya, and I. G. Neizvestny, Phys. Status Solidi A 101, 451 (1987).
33. E. B. Gorokhov, S. V. Pokrovskaya, and I. G. Neizvestnyǐ, Poverkhnost, No. 4, 103 (1983).
34. E. B. Gorokhov and A. L. Aseev, in Semiconductors, Ed. by I. G. Neizvestnyǐ (Inst. Fiz. Poluprovodn. Sib. Otd. Ross. Akad. Nauk, Novosibirsk, 1995), p. 199 [in Russian].
35. E. B. Gorokhov, Poverkhnost, No. 9, 76 (1992).
36. L. Rebohle, J. von Borany, D. Borchert, et al., Electrochem. Solid-State Lett. 4, G57 (2001).