On the origin of the 2.2-2.3 eV photoluminescence from chemically etched germanium

Journal of Luminescence

Volumn 101, Issue 4, 2003, Pages 275-283

  Kartopu, G ^a   Bayliss, S C ^a   Karavanskii, V A ^b   Curry, R J ^c   Turan, R ^d   Sapelkin, A V ^a  

^a DE MONTFORT UNIVERSITY   (United Kingdom)

^b PROKHOROV GENERAL PHYSICS INSTITUTE   (Russian Federation)

^c QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^d MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

Chemically etched Ge; Commercial c GeO2; Ge nanocrystals; GeOx; Photoluminescence; XANES

Indexed keywords

ETCHING; FOURIER TRANSFORM INFRARED SPECTROSCOPY; GERMANIUM COMPOUNDS; NANOSTRUCTURED MATERIALS; RAMAN SPECTROSCOPY; X RAY ANALYSIS;

CHEMICALLY ETCHED GERMANIUM;

PHOTOLUMINESCENCE;

EID: 0037376837     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(02)00570-7     Document Type: Article

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