Thickness dependent structural, electronic, and optical properties of Ge nanostructures

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 6, 2008, Pages 2955-2963

  Tripathi, S ^a   Brajpuriya, R ^a   Sharma, A ^a   Soni, A ^a   Okram, G S ^a   Chaudhari, S M ^a   Shripathi, T ^a  

^a UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH   (India)

Author keywords

Ge thin films; Photoelectron spectroscopy; Quantum confinement; Raman spectroscopy; Structural properties

Indexed keywords

ABSORPTION MEASUREMENTS; BAND-GAP VALUES; BLUE SHIFTING; CRYSTALLINITY; ELECTRON-BEAM; FILM-THICKNESS; GE NANOSTRUCTURES; GE THIN FILMS; GROWTH MORPHOLOGIES; LAYER THICKNESSES; NANO STRUCTURE FORMATION; NANO-CRYSTALLINE; OPTICAL ABSORPTION SPECTRUM; OPTICAL-; PEAK POSITIONS; PHOTOELECTRON SPECTROSCOPY (PES); PHOTOLUMINESCENCE (PL); QUANTUM CONFINEMENT EFFECT; RAMAN SPECTROSCOPY; RAMAN SPECTRUM; RESISTIVITY MEASUREMENTS; SMALL SIZE PARTICLES; STRUCTURAL PROPERTIES; THIN FILMS; WAVE NUMBERS;

ABSORPTION; ELECTROMAGNETIC WAVE ABSORPTION; ELECTRON BEAMS; ELECTRON OPTICS; ELECTRONIC PROPERTIES; ENERGY ABSORPTION; GERMANIUM; LIGHT ABSORPTION; LIGHT EMISSION; LUMINESCENCE; MOLECULAR ORBITALS; MOLECULAR SPECTROSCOPY; NANOSTRUCTURES; OPTICAL MATERIALS; OPTICAL PROPERTIES; PARTICLE BEAMS; PHOTOELECTRON SPECTROSCOPY; POTENTIAL ENERGY SURFACES; QUANTUM CONFINEMENT; SEMICONDUCTING CADMIUM TELLURIDE; SPECTRUM ANALYSIS; THICK FILMS;

MOLECULAR BEAM EPITAXY;

EID: 48449086195     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.151     Document Type: Article

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