Atomic structure of the (4 × 3) reconstructed InGaAs monolayer on GaAs(0 0 1)

Surface Science

Volumn 604, Issue 3-4, 2010, Pages 283-289

  Eisele, H ^a   Hopfner B ^a   Prohl, C ^a   Grabowski, J ^a   Dahne M ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

InAs GaAs; InGaAs; Molecular beam epitaxy; Scanning tunneling microscopy; Surface reconstruction; Wetting layer

Indexed keywords

ARSENIC DIMERS; ATOMIC STRUCTURE; BACKBONDS; DENSITY FUNCTIONAL THEORY CALCULATIONS; GAAS; GALLIUM ATOMS; GROWTH CONDITIONS; IN-LINE; IN-SITU SCANNING TUNNELING MICROSCOPIES; INAS; INAS/GAAS; INDIUM ATOMS; INGAAS; STRUCTURAL ARRANGEMENT; SURFACE LAYERS; SURFACE UNITS; UNIT CELLS; WETTING LAYER;

ARSENIC; ATOMS; CRYSTAL GROWTH; DENSITY FUNCTIONAL THEORY; DIMERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MONOLAYERS; REPAIR; SCANNING; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WIRES; STOICHIOMETRY; WETTING; WIND TUNNELS;

SURFACE RECONSTRUCTION;

EID: 74049135377     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.11.018     Document Type: Article

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