0.94 μm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots

Semiconductor Science and Technology

Volumn 15, Issue 11, 2000, Pages 1061-1064

  Mikhrin, S S ^a   Zhukov, A E ^a   Kovsh, A R ^a   Maleev, N A ^a   Ustinov, V M ^a   Shernyakov, Yu M ^a   Soshnikov, I P ^a   Livshits, D A ^a   Tarasov, I S ^a   Bedarev, D A ^a   Volovik, B V ^a   Maximov, M V ^a   Tsatsul'nikov, A F ^a   Ledentsov, N N ^a   Kop'ev, P S ^a   Bimberg, D ^b   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

POWER ELECTRONICS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

STRANSKI-KRASTANOW QUANTUM DOTS; SUBMONOLAYER QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 0034319328     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/11/309     Document Type: Article

References (11)

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