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Applied Physics Letters

Volumn 95, Issue 23, 2009, Pages

Evolution of the InAs wetting layer on GaAs (001) -c (4×4) on the atomic scale

(5) Grabowski, Jan a Prohl, Christopher a Höpfner, Britta a,b Dähne, Mario a Eisele, Holger a

a TECHNISCHE UNIVERSITÄT BERLIN (Germany)

b HAHN MEITNER INSTITUT (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABRUPT CHANGE; ATOMIC SCALE; GAAS(001); INAS; SECOND LAYER; STRUCTURAL UNIT; WETTING LAYER;

AGGLOMERATION; GALLIUM ALLOYS; INDIUM ARSENIDE; MONOLAYERS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM; WETTING;

SEMICONDUCTING INDIUM;

EID: 71949112790 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266865 Document Type: Article

Times cited : (21)

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