Effects of silicon source gas and substrate bias on the film properties of Si-incorporated diamond-like carbon by radio-frequency plasma-enhanced chemical vapor deposition

Japanese Journal of Applied Physics

Volumn 48, Issue 11, 2009, Pages

  Nakazawa, Hideki ^a   Kinoshita, Takeshi ^a   Kaimori, Yuhta ^a   Asai, Yuhki ^a   Suemitsu, Maki ^b   Abe, Toshimi ^c   Yasui, Kanji ^d   Endoh, Tetsuo ^b   Itoh, Takashi ^b   Narita, Yuzuru ^e   Enta, Yoshiharu ^a   Mashita, Masao ^a  

^a HIROSAKI UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOHOKU INSTITUTE OF TECHNOLOGY   (Japan)

^d NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

^e YAMAGATA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FRACTIONS; DC BIAS; DIAMOND-LIKE CARBON; DIMETHYLSILANE; DLC FILM; FILM PROPERTIES; FILM SURFACES; FLOW RATIOS; FRICTION COEFFICIENTS; INTERNAL STRESS; MECHANICAL AND TRIBOLOGICAL PROPERTIES; MONOMETHYLSILANE; NEGATIVE PULSE BIAS; ORGANOSILANES; RADIO FREQUENCY PLASMA; SI SOURCES; SOURCE GAS; SUBSTRATE BIAS;

ARGON; CARBON FILMS; CHEMICAL VAPOR DEPOSITION; DIAMOND LIKE CARBON FILMS; FRICTION; MECHANICAL PROPERTIES; METHANE; PLASMA DEPOSITION; WEAR RESISTANCE;

SILICON;

EID: 73849151447     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.116002     Document Type: Article

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