Customizing electron confinement in plasma-assembled Si/AlN nanodots for solar cell applications

Physics of Plasmas

Volumn 16, Issue 12, 2009, Pages

  Huang, S Y ^a   Arulsamy, A Das ^b   Xu, M ^a,c   Xu, S ^a   Cvelbar, U ^d   Mozetic, M ^d   Ostrikov, K ^b,e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CSIRO   (Australia)

^c SICHUAN NORMAL UNIVERSITY   (China)

^d JO EF STEFAN INSTITUTE   (Slovenia)

^e UNIVERSITY OF SYDNEY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ALN BUFFER; ELECTRON CONFINEMENT; ENERGY PEAKS; IONIZATION ENERGIES; MAGNETRON-SPUTTERING DEPOSITION; N-D SYSTEMS; NANODOTS; PL SPECTRA; QUANTUM CONFINEMENT EFFECTS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI NANODOTS; SI(111) SUBSTRATE; SOLAR-CELL APPLICATIONS; TANDEM SOLAR CELLS;

INDUCTIVELY COUPLED PLASMA; PLASMA CONFINEMENT; PLASMA DEPOSITION; SILICON; SOLAR CELLS; SOLAR ENERGY;

HIGH RESOLUTION ELECTRON MICROSCOPY;

EID: 73849110809     PISSN: 1070664X     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3274467     Document Type: Article

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43. Low-temperature plasma-assisted doping can be useful for this purpose. This can be done in two ways: (a) plasma-assisted sputtering, similar to what is considered in this work and (b) plasma-enhanced chemical vapor deposition using suitable gaseous precursors. If metal doping is required, suitable metal-organic precursor gases should be used.