Microstructure and chemical wet etching characteristics of AlN films deposited by ac reactive magnetron sputtering

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 28, Issue 1, 2010, Pages 69-76

  Tanner, S M ^a   Felmetsger, V V ^a  

^a Tegal Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; ALUMINUM NITRIDE THIN FILMS; CHEMICAL ETCHING; CHEMICAL WET ETCHING; CRITICAL EFFECTS; CRYSTALLINITIES; ETCHING CONDITION; FILM SURFACE MORPHOLOGY; HIGH PRESSURE; HIGH RESOLUTION X RAY DIFFRACTION; LOW PRESSURES; POST-DEPOSITION; REACTIVE MAGNETRON SPUTTERING; RF DISCHARGE; RF PLASMA; SCANNING ELECTRONS; UNDERLAYERS; X RAY ROCKING CURVE;

ALUMINUM NITRIDE; ATOMIC FORCE MICROSCOPY; FULL WIDTH AT HALF MAXIMUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MICROSTRUCTURE; MOLYBDENUM; MORPHOLOGY; NITRIDES; PLASMA ETCHING; PRESSURE EFFECTS; SCANNING ELECTRON MICROSCOPY; SURFACE MORPHOLOGY; THICK FILMS;

WET ETCHING;

EID: 73849093210     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3268620     Document Type: Article

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