Memory effect in metal-chalcogenide-metal structures for ultrahigh-density nonvolatile memories

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 A, 2006, Pages 4951-4954

  Yin, You ^a   Sone, Hayato ^a   Hosaka, Sumio ^a  

^a GUNMA UNIVERSITY   (Japan)

Author keywords

AglnSbTe; Chalcogenide; Dendrite; Memory; Phase change; Switching

Indexed keywords

ALUMINUM; ELECTRIC RESISTANCE; ELECTRODES; METALS; SWITCHING; TEMPERATURE DISTRIBUTION; THIN FILMS;

AGLNSBTE; CHALCOGENIDE; DENDRITE; MEMORY; PHASE CHANGE;

SHAPE MEMORY EFFECT;

EID: 33745256738     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4951     Document Type: Article

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