Detailed analysis of parasitic loading effects on power performance of GaN-on-silicon HEMTs

Solid-State Electronics

Volumn 53, Issue 2, 2009, Pages 185-189

  Xiao, Dongping ^a,b   Schreurs, Dominique ^b   De Raedt, W ^a   Derluyn, J ^a   Germain, M ^a   Nauwelaers, B ^b   Borghs, G ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Conductive substrate; GaN; GaN on Si; HEMTs; Large signal model

Indexed keywords

CORUNDUM; ELECTRON MOBILITY; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; SAPPHIRE; SEMICONDUCTING GALLIUM; SILICON; SOLID OXIDE FUEL CELLS (SOFC); SPURIOUS SIGNAL NOISE; SUBSTRATES;

CONDUCTIVE SUBSTRATE; GAN; GAN-ON-SI; HEMTS; LARGE-SIGNAL MODEL;

GALLIUM ALLOYS;

EID: 58349086555     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.11.002     Document Type: Article

References (9)

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