Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier

Electronics Letters

Volumn 41, Issue 16, 2005, Pages 909-911

  Seo, S ^a,c   Pavlidis, D ^a,c   Moon, J S ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b Hughes Aircraft Co   (United States)

^c DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCIES; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; NOISE GENERATORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; WAVEGUIDES;

FREQUENCY RANGE; GAIN FLATNESS; LANGE COUPLER; LOW NOISE AMPLIFIER (LNA);

AUDIO FREQUENCY AMPLIFIERS;

EID: 23944457388     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20051461     Document Type: Article

References (6)

1. Hsu, S., et al.: 'Low noise AlGaN/GaN MODFETs with high breakdown and power characteristics'. 2001 GaAs IC Symp., Baltimore, MD, USA, October 2001, pp. 153-155
2. Ellis, G.A., et al.: 'Wideband AlGaN/GaN HEMT MMIC low noise amplifier'. IEEE MTT-S Int. Microwave Symp. Dig., 2004, June 2004, Vol. 1, pp. 153-156
3. Hongtao, X., et al.: 'C-band high-dynamic range GaN HEMT low-noise amplifier', IEEE Microw. Wirel. Compon. Lett., 2004, 14, pp. 262-264
4. Krausse, D., et al.: 'Robust GaN HEMT low-noise amplifier MMICs for X-band applications'. 12th European Gallium Arsenide and other Compound Semiconductors Application Symp., 2004, pp. 71-74
5. Cha, S., et al.: 'Wideband AlGaN/GaN HEMT low noise amplifier for highly survivable receiver electronics'. IEEE MTT-S Int. Microwave Symp. Dig. 2004, June 2004, Vol. 2, pp. 829-831
6. Moon, J.S., et al.: 'Microwave noise performance of AlGaN/GaN HEMTs with small DC power dissipation', IEEE Electron Device Lett., 2002, 23, (11), pp. 637-639