Design and analysis of broadband dual-gate balanced low-noise amplifiers

IEEE Journal of Solid-State Circuits

Volumn 42, Issue 10, 2007, Pages 2107-2115

  Deal, William R ^a,b   Biedenbender, Michael ^a,b   Liu, Po Hsin ^b   Uyeda, Jansen ^b   Siddiqui, Mansoor ^b   Lai, Richard ^a,b  

^a IEEE

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Balanced amplifier; Dual gate; High electron mobility transistor (HEMT); Low noise amplifier (LNA)

Indexed keywords

BANDWIDTH; BROADBAND AMPLIFIERS; FREQUENCY BANDS; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM;

BALANCED AMPLIFIER; BALANCED AMPLIFIER TOPOLOGY; BROADBAND DUAL-GATE BALANCED LOW-NOISE AMPLIFIERS; DUAL-GATE DEVICES; SINGLE-STAGE COMMON-SOURCE DEVICE;

LOW NOISE AMPLIFIERS;

EID: 34748840166     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2007.904316     Document Type: Conference Paper

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