Direct heteroepitaxial lateral overgrowth of GaN on stripe-patterned sapphire substrates with very thin SiO2 masks

Physica Status Solidi (B) Basic Research

Volumn 241, Issue 12, 2004, Pages 2763-2766

  Cheong, H S ^a   Yoo, M K ^a   Kim, H G ^a   Bae, S J ^a   Kim, C S ^a   Hong, C H ^a   Baek, J H ^b   Kim, H J ^b   Yu, Y M ^b   Cho, H K ^c  

^a Chonbuk National University   (South Korea)

^b Korea Photonics Technology Institute (KOPTI)   (South Korea)

^c Dong A University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MASKS; MICROELECTRONICS; NUCLEATION; SAPPHIRE; SILICA; SUBSTRATES;

HETEROEPITAXIAL LATERAL OVERGROWTH; MICROSCOPIC IMAGES; SILICA MASKS; THREADING DISLOCATION (TD);

GALLIUM NITRIDE;

EID: 7444233110     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssb.200405118     Document Type: Conference Paper

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