Analytical and TCAD-supported approach to evaluate intrinsic process variability in nanoscale MOSFETs

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Volumn , Issue , 2009, Pages 419-422

  Bonfiglio, Valentina ^a   Iannaccone, Giuseppe ^a  

^a UNIVERSITY OF PISA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODELING; COMPUTATIONAL COSTS; DEVICE DESIGN; DOUBLE GATE MOSFET; INTRINSIC PROCESS; LINE EDGE ROUGHNESS; MOS-FET; NANOSCALE MOSFETS; PARAMETER SENSITIVITIES; STATISTICAL SIMULATION; TCAD SIMULATION; THRESHOLD VOLTAGE VARIABILITY; ULTRA-THIN-BODY;

ELECTRON BEAM LITHOGRAPHY; MOSFET DEVICES; PHOTORESISTS; SENSITIVITY ANALYSIS; SURFACE ROUGHNESS; THREE DIMENSIONAL;

ROUGHNESS MEASUREMENT;

EID: 72849113343     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2009.5331470     Document Type: Conference Paper

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