Strain-induced interfacial hole localization in self-assembled quantum dots: Compressive InAs/GaAs versus tensile InAs/InSb

Physical Review B - Condensed Matter and Materials Physics

Volumn 70, Issue 23, 2004, Pages 1-9

  He, Lixin ^a   Bester, Gabriel ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; ATOM; CHEMICAL STRUCTURE; COMPRESSIVE STRENGTH; ELECTRIC POTENTIAL; MATHEMATICAL ANALYSIS; PARTICLE SIZE; QUANTUM DOT; SEMICONDUCTOR; STRESS STRAIN RELATIONSHIP; STRUCTURE ANALYSIS; TENSILE STRENGTH;

EID: 13944258415     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.235316     Document Type: Article

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