Effect of oxygen pressure on structure and properties of Bi 1.5 Zn 1.0 Nb 1.5 O 7 pyrochlore thin films prepared by pulsed laser deposition

Applied Surface Science

Volumn 256, Issue 6, 2010, Pages 1861-1866

  Zhang, Xiaohua ^a   Ren, Wei ^a   Shi, Peng ^a   Chen, Xiaofeng ^a   Wu, Xiaoqing ^a  

^a BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

Author keywords

BZN thin films; Dielectric properties; Oxygen pressure; Pulsed laser deposition; Tunability

Indexed keywords

AMORPHOUS FILMS; BISMUTH COMPOUNDS; DIELECTRIC PROPERTIES; DIELECTRIC PROPERTIES OF SOLIDS; FILM PREPARATION; II-VI SEMICONDUCTORS; NIOBIUM OXIDE; OXYGEN; PRESSURE EFFECTS; PULSED LASER DEPOSITION; PULSED LASERS; STRUCTURAL PROPERTIES; ZINC OXIDE;

BI-2O3-ZNO-NB2O5; BZN THIN FILMS; CUBIC PYROCHLORE STRUCTURE; DIELECTRIC TUNABILITY; OTHER PROPERTIES; OXYGEN PRESSURE; STRUCTURE AND PROPERTIES; TUNABILITIES;

THIN FILMS;

EID: 72549108752     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.10.020     Document Type: Article

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