Influence of oxygen partial pressure on the structural and dielectric properties of Ba(Zr0.3Ti0.7)O3 thin films grown on (LaAlO3)0.3(Sr2AlTaO6)0.35 (001) using pulsed laser deposition

Thin Solid Films

Volumn 517, Issue 6, 2009, Pages 2092-2098

  Wang, D Y ^a   Yun, P ^a   Wang, Y ^a   Chan, H L W ^a   Choy, C L ^a  

^a HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

BZT; PLD; Tunability; X ray diffraction

Indexed keywords

BARIUM; CERAMIC CAPACITORS; CURIE TEMPERATURE; DIELECTRIC PROPERTIES; DIFFRACTION; EPITAXIAL FILMS; LANTHANUM ALLOYS; MICROWAVE DEVICES; MICROWAVES; OXYGEN; PARTIAL PRESSURE; PERMITTIVITY; POSITIVE IONS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SOLIDS; THIN FILMS; X RAY ANALYSIS; X RAY DIFFRACTION; ZIRCONIUM;

BROAD FREQUENCY RANGES; BZT; CRYSTAL SUBSTRATES; FIGURE OF MERITS; INFLUENCE OF OXYGENS; LATTICE PARAMETERS; MICROWAVE DEVICE APPLICATIONS; OXYGEN PARTIAL PRESSURES; PLAIN STRAINS; PLD; PULSED LASERS; RELATIVE PERMITTIVITIES; STRONG CORRELATIONS; TETRAGONAL DISTORTIONS; TUNABILITY;

TENSILE STRAIN;

EID: 58149087970     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.10.029     Document Type: Article

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