Effects of film thickness and preferred orientation on the dielectric properties of (Bi1.5Zn0.5)(Zn0.5Nb 1.5)O7 films

Journal of Physics D: Applied Physics

Volumn 40, Issue 9, 2007, Pages 2906-2910

  Cao, L Z ^a   Fu, W Y ^a   Wang, S F ^b   Wang, Q ^c   Sun, Z H ^a   Yang, H ^a   Cheng, B L ^a   Wang, H ^c   Zhou, Y L ^a  

^a INSTITUTE OF PHYSICS   (China)

^b HEBEI UNIVERSITY   (China)

^c XI'AN JIAOTONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH ALLOYS; DIELECTRIC PROPERTIES; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; FILM THICKNESS; PULSED LASER DEPOSITION;

ASYMMETRIC BEHAVIOUR; DIELECTRIC LOSS; INTERFACIAL LAYER; PREFERRED ORIENTATION;

METALLIC FILMS;

EID: 34247521906     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/9/036     Document Type: Article

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