Properties of ultrathin high permittivity (Nb1-xTa x)2O5 films prepared by aqueous chemical solution deposition

Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

  Hardy, A ^a,b,c   Van Elshocht, S ^d   Dewulf, D ^a,b   Clima, S ^d   Peys, N ^d   Adelmann, C ^d   Opsomer, K ^d   Favia, P ^d   Bender, H ^d   Hoflijk, I ^d   Conard, T ^d   Franquet, A ^d   Van Den Rul, H ^a,b   Kittl, J A ^d   De Gendt, S ^d,e   Van Bael, M K ^a,b   Mullens, J ^a  

^a HASSELT UNIVERSITY   (Belgium)

^b HASSELT UNIVERSITY   (Belgium)

^c Hogeschool Limburg   (Belgium)

^d IMEC   (Belgium)

^e UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS CHEMICAL SOLUTION DEPOSITION; AQUEOUS PRECURSOR; CAPACITANCE VOLTAGE; CHEMICAL SOLUTION DEPOSITION; CRYSTALLINE LAYERS; CRYSTALLIZATION TEMPERATURE; CURRENT-VOLTAGE MEASUREMENTS; HIGH PERMITTIVITY; IN-SITU; TA CONTENT; ULTRA-THIN;

CHEMICALS; CRYSTALLINE MATERIALS; CRYSTALLIZATION; LEAKAGE CURRENTS; PERMITTIVITY; TANTALUM;

NIOBIUM;

EID: 72249085376     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3247348     Document Type: Article

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