Conduction mechanisms in Ta2O5 stack in response to rapid thermal annealing

Microelectronic Engineering

Volumn 85, Issue 1, 2008, Pages 214-222

  Spassov, D ^a   Atanassova, E ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

Conduction mechanisms; High k stack; RTA; Tantalum pentoxide

Indexed keywords

ANNEALING; FILMS; LEAKAGE CURRENTS; STOICHIOMETRY;

CONDUCTION MECHANISMS; OXIDATION TEMPERATURE; RAPID THERMAL ANNEALING (RTA); TANTALUM PENTOXIDE;

TANTALUM COMPOUNDS;

EID: 36148992201     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.05.009     Document Type: Article

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