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Journal of the Electrochemical Society

Volumn 157, Issue 1, 2010, Pages

Characterization of nanometer-scale gap formation

(3) Lee, Donovan a Tran, Helen a King Liu, Tsu Jae a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCH RATES; FABRICATION PROCESS; GAP FORMATION; GAP SIZE; LATERAL ETCHING; NANO-METER-SCALE; NANOELECTRONIC DEVICES; NANOGAPS; NANOMETER-SCALE GAPS; POLYCRYSTALLINE; POSTDEPOSITION THERMAL ANNEALING; SACRIFICIAL LAYER; SI WAFER; STRUCTURAL LAYERS; ULTRA-SMALL;

FORMING; NANOELECTRONICS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON OXIDES; SILICON WAFERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 72249084554 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3253546 Document Type: Article

Times cited : (1)

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