Lateral etching and filling of high aspect ratio nanometer-size cavities for silicon device structures

Applied Physics Letters

Volumn 73, Issue 20, 1998, Pages 2947-2949

  King, C A ^a   Kim, Y O ^a   Ng, K K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21944444119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122639     Document Type: Article

References (6)

1. Y. Kinoshita, K. Imai, H. Yoshida, H. Suzuki, T. Tatsumi, and T. Yamazaki, Tech. Dig. Int. Electron Devices Meet., 441 (1994).
2. M. Ugajin, J. Kodate, Y. Kobayashi, S. Konaka, and T. Sakai, Tech. Dig. Int. Electron Devices Meet., 735 (1995).
3. J. Liu, Y.-C. Tai, J. Lee, K.-C. Pong, Y. Zohar, and C.-M. Ho, in Proceedings of IEEE Micro Electro Mechanical Systems, Ft. Lauderdale, FL, 1993 (IEEE, Piscataway, NJ, 1993), pp. 71-76.
4. D. J. Monk, D. S. Soane, and R. T. Howe, J. Electrochem. Soc. 141, 264 (1994).
5. G Timp, A. Agarwal, F. H. Bauman, T. Boone, M. Buonanno, R. Cirelli, V. Donnelly, M. Foad, D. Grant, M. Green, H. Gossman, S. Hillenius, J. Jackson, D. Jacobson, R. Kleiman, A. Kornblit, F. Klemens, J. T.-C. Lee, W. Mansfield, S. Moccio, A. Murrell, M. O'Malley, J. Rosamilia, J. Sepjeta, P. Silverman, T. Sorsch, W. W. Tai, D. Tennant, H. Vuong, and B. Weir, Tech. Dig. Int. Electron Devices Meet., 930 (1997).
6. E. Kim and G. M. Whitesides, J. Phys. Chem. B 101, 855 (1997).