ALD refill of vanometer-scale gaps with high- κ dielectric for advanced CMOS technologies

Electrochemical and Solid-State Letters

Volumn 10, Issue 9, 2007, Pages 257-259

  Lee, Donovan ^a   Seidel, Thomas ^b   Dalton, Jeremie ^b   King Liu, Tsu Jae ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b AIXTRON Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ENERGY GAP; FERMI LEVEL; GATE DIELECTRICS; LEAKAGE CURRENTS;

OXYGEN VACANCY FORMATION; THERMAL EXPOSURE;

CMOS INTEGRATED CIRCUITS;

EID: 34547142127     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2749331     Document Type: Article

References (7)

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